Generation of intense pulsed ion beam by a B/sub r/ type magnetically insulated ion diode with carbon plasma gun

To apply the pulsed heavy ion beam (PHIB) to an implantation process of semiconductor, it is very important generate a pure ion beam. To obtain a pure PHIB we have proposed a new type of accelerator using bipolar pulse. To develop the accelerator we are developing a new type of B ion diode using a carbon plasma gun. By using the plasma gun, ion source plasma of ion current density /spl ap/30 A/cm/sup 2/ was obtained. The B/sub r/ ion diode was successfully operated with plasma gun at diode voltage /spl ap/100 kV, diode current /spl ap/1 kA, pulse duration /spl ap/200 ns and 3 A/cm/sup 2/ of ion current density was obtained.