Title :
Strained Si/Ge heterostructures : SiGe virtual substrate and strained Ge channel
Author :
Sawano, Kentarou
Author_Institution :
Musashi Institute of Technology, Japan
Keywords :
CMOS technology; Capacitive sensors; Conferences; DSL; Degradation; Germanium silicon alloys; Research and development; Silicon germanium; Stress; Surface-mount technology;
Conference_Titel :
Advanced Thermal Processing of Semiconductors, 2008. RTP 2008. 16th IEEE International Conference on
Conference_Location :
Las Vegas, NV, USA
Print_ISBN :
978-1-4244-1950-0
Electronic_ISBN :
978-1-4244-1951-7
DOI :
10.1109/RTP.2008.4690532
