Title :
High mobility and advanced channels materials
Author :
Oh, Jungwoo ; Majhi, Prasanth ; Jammy, Raj
Author_Institution :
SEMATECH, USA
Abstract :
• Ge based channels appear promising for high mobility pMOSFETs - Need for module level (epi, gate stack, junctions, contacts) optimization as demonstrated • Demonstrated additivity of strain (uniaxial) to the mobility of Ge based channels • Several challenges remain but exciting opportunities for focused research (academic and industry collaboration)
Keywords :
CMOS technology; Capacitive sensors; Conferences; DSL; Degradation; Nanoscale devices; Physics; Research and development; Stress; Surface-mount technology;
Conference_Titel :
Advanced Thermal Processing of Semiconductors, 2008. RTP 2008. 16th IEEE International Conference on
Conference_Location :
Las Vegas, NV, USA
Print_ISBN :
978-1-4244-1950-0
Electronic_ISBN :
978-1-4244-1951-7
DOI :
10.1109/RTP.2008.4690534
