Temperature measurement for stacked die chip by using infrared radiation thermometer

Temperature data was obtained by using a MP/MB infrared radiation thermometer. The minimum measuring size of the infrared radiation thermometer was Φ0.6mm and the single chip size was 4 mm × 2 mm × 0.24 mm. At a bonding temperature of 200°C, temperature rise curves of the heat stage and the stacked die chip, different temperature of the different areas of the stacked die chip structure were obtained. The results could be helpful to further studies of wire bonding.