Experimental investigations of static and transient current sharing of parallel-connected silicon carbide MOSFETs

Author

Sadik, Diane-Perle ; Colmenares, Juan ; Peftitsis, Dimosthenis ; Jang-Kwon Lim ; Rabkowski, Jacek ; Nee, H.-P.

Author_Institution

Electr. Energy Conversion (E2C) Lab., KTH R. Inst. of Technol., Stockholm, Sweden

fYear

2013

Firstpage

1

Lastpage

10

Abstract

An Experimental performance analysis of a parallel connection of two 1200/80 MΩ silicon carbide SiC MOSFETs is presented. Static parallel connection was found to be unproblematic. The switching performance of several pairs of parallel-connected MOSFETs is shown employing a common simple totem-pole driver. Good transient current sharing and high-speed switching waveforms with small oscillations are presented. To conclude this analysis, a dc/dc boost converter using parallel-connected SiC MOSFETs is designed for stepping up a voltage from 50 V to 560 V. It has been found that at high frequencies, a mismatch in switching losses results in thermal unbalance between the devices.

Keywords

DC-DC power convertors; power MOSFET; silicon compounds; switching convertors; wide band gap semiconductors; DC-DC boost converter; SiC; high-speed switching waveforms; parallel-connected silicon carbide MOSFET; resistance 1200 Mohm; resistance 80 Mohm; static current sharing; static parallel connection; switching loss; thermal unbalance; totem-pole driver; transient current sharing; voltage 50 V to 560 V; Current measurement; MOSFET; Silicon carbide; Switches; Temperature measurement; Transient analysis; Voltage measurement; MOS device; MOSFET; Parallel operation; Silicon Carbide (SiC); Switching losses;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Electronics and Applications (EPE), 2013 15th European Conference on

Conference_Location

Lille

Type

conf

DOI

10.1109/EPE.2013.6634432

Filename

6634432