A 16 A IGBT-gate drive ASIC in a 18 V, 3 μm BiCMOS technology

Author

Kuratli, Christoph ; Biber, Alice ; Qiuting Huang

Author_Institution

Integrated Syst. Lab., Swiss Federal Inst. of Technol., Zurich, Switzerland

Volume

2

fYear

34881

Firstpage

491

Abstract

An integrated gate-drive (IGD) ASIC has been implemented in a 18 V, 3 μm BiCMOS technology for IGBT based intelligent power modules (IPM). It consists of a mixed analog digital controller and a powerful output stage to drive the gate of the IGBT. The controller features various functions such as master/slave operation, dV/dT control and short circuit protection. The BiCMOS type driver is capable of delivering up to 16 A peak current to a capacitive load

Keywords

BiCMOS integrated circuits; driver circuits; insulated gate bipolar transistors; mixed analogue-digital integrated circuits; power bipolar transistors; power integrated circuits; 16 A; 18 V; 3 mum; BiCMOS technology; IGBT intelligent power module; capacitive load; dV/dT control; integrated gate-drive ASIC; master/slave operation; mixed analog digital controller; output stage; peak current; short circuit protection; Application specific integrated circuits; BiCMOS integrated circuits; Current supplies; Driver circuits; Insulated gate bipolar transistors; MOSFET circuits; Multichip modules; Power MOSFET; Silicon; Very large scale integration;

fLanguage

English

Publisher

ieee

Conference_Titel

Industrial Electronics, 1995. ISIE '95., Proceedings of the IEEE International Symposium on

Conference_Location

Athens

Print_ISBN

0-7803-7369-3

Type

conf

DOI

10.1109/ISIE.1995.497234

Filename

497234