DocumentCode :
1584815
Title :
Analysis of the plastic deformation in aluminium metallizations of Al2O3-based DAB substrates
Author :
Poller, Tilo ; Lutz, Josef ; Bottge, Bianca ; Knoll, Heiko
Author_Institution :
Dept. of Power Electron. & EMC, Chemnitz Univ. of Technol., Chemnitz, Germany
fYear :
2013
Firstpage :
1
Lastpage :
10
Abstract :
DAB are a new kind of substrates in which the copper layer was replaced by an aluminum layer. In [1] a increase of the roughness of these aluminum layer was observed during thermal cycling tests. A similar effect was observed during power cycling tests in [2, 3]. This paper will discuss this effect with experimental results and Finite Element (FEM) simulations.
Keywords :
aluminium compounds; finite element analysis; insulated gate bipolar transistors; plastic deformation; power bipolar transistors; semiconductor device metallisation; Al2O3; FEM simulation; IGBT; aluminium metallizations; aluminium oxide-based DAB substrates; aluminum layer roughness; finite element simulation; plastic deformation analysis; power cycling tests; thermal cycling tests; Aluminum; Insulated gate bipolar transistors; Metallization; Multichip modules; Plastics; Substrates; Temperature measurement; Aerospace; Packaging; Reliability; Thermal design; Thermal stress;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Power Electronics and Applications (EPE), 2013 15th European Conference on
Conference_Location :
Lille
Type :
conf
DOI :
10.1109/EPE.2013.6634442
Filename :
6634442
Link To Document :
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