Total temperature fluctuation of a patternned wafer in the millisecond annealing

This paper describes the total temperature fluctuation within patterned wafers based on sub-100μm-scaled microscopic temperature non-uniformity within a chip, and mm-scaled macroscopic temperature variation within blanket wafers in laser spike annealing (LSA) and Flash Lamp Annealing (FLA). Temperature distribution within a chip and non-uniformity within blanket wafers are obtained by thermal wave (TW) method and conventional 4 point probe sheet resistance measurement, respectively. In the case of LSA, it was found that the local temperature is less dependent on pattern density. However, hot spots which local temperature is 50 °C higher than the surrounding area occur near large active areas. In the case of FLA, the local temperature depends strongly on pattern pitch. We did not find the hot spot. Total temperature fluctuations of pattern wafers of LSA and FLA reach about 90 and 120 °C.