High precision micro-scale Hall effect characterization method using in-line micro four-point probes

Accurate characterization of ultra shallow junctions (USJ) is important in order to understand the principles of junction formation and to develop the appropriate implant and annealing technologies. We investigate the capabilities of a new micro-scale Hall effect measurement method where Hall effect is measured with collinear micro four-point probes (M4PP). We derive the sensitivity to electrode position errors and describe a position error suppression method to enable rapid reliable Hall effect measurements with just two measurement points. We show with both Monte Carlo simulations and experimental measurements, that the repeatability of a micro-scale Hall effect measurement is better than 1 %. We demonstrate the ability to spatially resolve Hall effect on micro-scale by characterization of an USJ with a single laser stripe anneal. The micro sheet resistance variations resulting from a spatially inhomogeneous anneal temperature are found to be directly correlated to the degree of dopant activation.