• DocumentCode
    1585376
  • Title

    Circuit and Device Technologies for CMOS functional Image Sensors

  • Author

    Kawahito, Shoji

  • Author_Institution
    Res. Inst. of Electron., Shizuoka Univ., Hamamatsu
  • fYear
    2006
  • Firstpage
    42
  • Lastpage
    47
  • Abstract
    Circuit and device technologies for CMOS-based functional image sensors are reviewed and discussed. A key device technology that enhances the image quality of CMOS image sensors to be comparable to or even better than the CCD is a pinned photo diode. However, the performance of the CMOS image sensors also largely owes to the design of readout circuits. Several examples that successfully achieve the extreme performance using circuit techniques are reviewed in the aspects of sensitivity, noise, dynamic range and speed. For special functions such as 3-dimensional imaging, the development of new device technologies is also particularly important. As an example, a time-of-flight range finding CMOS imager with a modified CMOS process and a special pixel structure is presented
  • Keywords
    CMOS image sensors; detector circuits; photoelectric devices; readout electronics; CMOS functional image sensors; circuit technology; device technology; pixel structure; readout circuits; time-of-flight range finding; CMOS image sensors; CMOS process; CMOS technology; Charge coupled devices; Circuit noise; Diodes; Dynamic range; Image quality; Image sensors; Pixel;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Very Large Scale Integration, 2006 IFIP International Conference on
  • Conference_Location
    Nice
  • Print_ISBN
    3-901882-19-7
  • Type

    conf

  • DOI
    10.1109/VLSISOC.2006.313273
  • Filename
    4107602