DocumentCode
1585376
Title
Circuit and Device Technologies for CMOS functional Image Sensors
Author
Kawahito, Shoji
Author_Institution
Res. Inst. of Electron., Shizuoka Univ., Hamamatsu
fYear
2006
Firstpage
42
Lastpage
47
Abstract
Circuit and device technologies for CMOS-based functional image sensors are reviewed and discussed. A key device technology that enhances the image quality of CMOS image sensors to be comparable to or even better than the CCD is a pinned photo diode. However, the performance of the CMOS image sensors also largely owes to the design of readout circuits. Several examples that successfully achieve the extreme performance using circuit techniques are reviewed in the aspects of sensitivity, noise, dynamic range and speed. For special functions such as 3-dimensional imaging, the development of new device technologies is also particularly important. As an example, a time-of-flight range finding CMOS imager with a modified CMOS process and a special pixel structure is presented
Keywords
CMOS image sensors; detector circuits; photoelectric devices; readout electronics; CMOS functional image sensors; circuit technology; device technology; pixel structure; readout circuits; time-of-flight range finding; CMOS image sensors; CMOS process; CMOS technology; Charge coupled devices; Circuit noise; Diodes; Dynamic range; Image quality; Image sensors; Pixel;
fLanguage
English
Publisher
ieee
Conference_Titel
Very Large Scale Integration, 2006 IFIP International Conference on
Conference_Location
Nice
Print_ISBN
3-901882-19-7
Type
conf
DOI
10.1109/VLSISOC.2006.313273
Filename
4107602
Link To Document