Title :
SiC-on-insulator interface stability crystallographical aspects
Author :
Kazak-Kazakevich, Alexander Z. ; Luchinin, Victor V. ; Yudin, Michael G.
Author_Institution :
Microtechnol. Centre, St. Peters State Electrotech. Univ., Russia
Abstract :
To investigate heterojunction stability, an interface model based on the molecular dynamics formalism was used. The resulting variant of conjugation was found to fit the interface energy minimum. An algorithm of optimal orientation selection to predict the stability of a given type of conjugation is proposed. The model is applied to study conjugation in the system SiC-AlN-Al2O3
Keywords :
interface structure; molecular dynamics method; semiconductor-insulator boundaries; silicon compounds; wide band gap semiconductors; SiC-AlN-Al2O3; SiC-on-insulator interface stability; conjugation; heterojunction stability; interface energy minimum; interface model; molecular dynamics formalism; optimal orientation selection; Atomic layer deposition; Bonding; Chemicals; Crystallography; Heterojunctions; Insulation; Lattices; Silicon carbide; Stability; Substrates;
Conference_Titel :
High Temperature Electronics Conference, 1998. HITEC. 1998 Fourth International
Conference_Location :
Albuquerque, NM
Print_ISBN :
0-7803-4540-1
DOI :
10.1109/HITEC.1998.676753
