Characterization of deep levels in 6H-SiC pn junction diodes

Author

Ghaffour, K. ; Lauer, V. ; Souifi, A. ; Guillot, G. ; Raynaud, C. ; Ortolland, S. ; Locatelli, M.L. ; Chante, J.P.

Author_Institution

Inst. Nat. des Sci. Appliquees, Villeurbanne, France

fYear

1998

Firstpage

19

Lastpage

22

Abstract

SiC bipolar n⁺p diodes of mesa types fabricated by nitrogen implantation or by epitaxy and passivated with a deposited oxide have been electrically characterized. C-V and I-V measurements have been made to analyze the quality of the junction. Deep level Transient Spectroscopy shows the presence of several hole traps in relatively high concentration (N_T~0.01 N_A). One trap located at E_v+0.49 eV has been more precisely studied and is probably due to a hole trap created by the nitrogen implantation

Keywords

deep level transient spectroscopy; deep levels; hole traps; ion implantation; p-n junctions; power semiconductor diodes; semiconductor device measurement; silicon compounds; wide band gap semiconductors; 6H-SiC pn junction diodes; C-V measurements; DLTS; I-V measurements; N implantation; SiC; SiC bipolar n⁺p diodes; deep level characterization; electrical characterization; epitaxy; hole traps; junction quality; mesa type diodes; oxide passivation; power device; Current measurement; Diodes; Doping; Electric variables measurement; Epitaxial growth; Epitaxial layers; Nitrogen; Silicon carbide; Spectroscopy; Thermal conductivity;

fLanguage

English

Publisher

ieee

Conference_Titel

High Temperature Electronics Conference, 1998. HITEC. 1998 Fourth International

Conference_Location

Albuquerque, NM

Print_ISBN

0-7803-4540-1

Type

conf

DOI

10.1109/HITEC.1998.676754

Filename

676754