Title :
Characterization of deep levels in 6H-SiC pn junction diodes
Author :
Ghaffour, K. ; Lauer, V. ; Souifi, A. ; Guillot, G. ; Raynaud, C. ; Ortolland, S. ; Locatelli, M.L. ; Chante, J.P.
Author_Institution :
Inst. Nat. des Sci. Appliquees, Villeurbanne, France
Abstract :
SiC bipolar n+p diodes of mesa types fabricated by nitrogen implantation or by epitaxy and passivated with a deposited oxide have been electrically characterized. C-V and I-V measurements have been made to analyze the quality of the junction. Deep level Transient Spectroscopy shows the presence of several hole traps in relatively high concentration (NT~0.01 NA). One trap located at Ev+0.49 eV has been more precisely studied and is probably due to a hole trap created by the nitrogen implantation
Keywords :
deep level transient spectroscopy; deep levels; hole traps; ion implantation; p-n junctions; power semiconductor diodes; semiconductor device measurement; silicon compounds; wide band gap semiconductors; 6H-SiC pn junction diodes; C-V measurements; DLTS; I-V measurements; N implantation; SiC; SiC bipolar n+p diodes; deep level characterization; electrical characterization; epitaxy; hole traps; junction quality; mesa type diodes; oxide passivation; power device; Current measurement; Diodes; Doping; Electric variables measurement; Epitaxial growth; Epitaxial layers; Nitrogen; Silicon carbide; Spectroscopy; Thermal conductivity;
Conference_Titel :
High Temperature Electronics Conference, 1998. HITEC. 1998 Fourth International
Conference_Location :
Albuquerque, NM
Print_ISBN :
0-7803-4540-1
DOI :
10.1109/HITEC.1998.676754
