Title :
SiC BGJFET inverter for high temperature/power applications
Author :
Rozario, Lisa V. ; Sadwick, Laurence P. ; Hwu, R. Jennifer ; King, Donald B.
Author_Institution :
Dept. of Electr. Eng., Utah Univ., Salt Lake City, UT, USA
Abstract :
SiC buried gate JFET (BGJFET) inverters were designed, implemented, and tested for high-temperature and high-power applications. The main purpose of this study was to investigate the thermal stability of the SiC BGJFETs in a circuit operation as well as to observe the effects of temperature on the circuit performance. The work is subdivided into two major sections: modeling of SiC BGJFETs and simulation of various inverter configurations; and experimental results and observations
Keywords :
JFET integrated circuits; SPICE; circuit optimisation; circuit simulation; high-temperature electronics; integrated circuit design; junction gate field effect transistors; logic gates; power field effect transistors; semiconductor device models; silicon compounds; thermal stability; wide band gap semiconductors; 10 kHz; 100 kHz; 25 C; 300 C; HSPICE; SiC; SiC BGJFET modeling; SiC buried gate JFET inverters; circuit operation; circuit optimization; circuit performance; high-power applications; high-temperature applications; inverter configuration simulation; temperature effects; thermal stability; Frequency; Integrated circuit modeling; JFETs; MESFETs; Parameter extraction; Pulse inverters; SPICE; Silicon carbide; Temperature; Threshold voltage;
Conference_Titel :
High Temperature Electronics Conference, 1998. HITEC. 1998 Fourth International
Conference_Location :
Albuquerque, NM
Print_ISBN :
0-7803-4540-1
DOI :
10.1109/HITEC.1998.676756
