Title :
Two-dimensional numerical simulation of short channel SOI transistors
Author :
Armstrong, G.A. ; Thomas, N.J. ; Davis, J.R.
Author_Institution :
Dept. of Electr. & Electron. Eng., Queen´´s Univ., Belfast, UK
Abstract :
A two-dimensional device simulator, based on the finite-difference discretization has been developed to analyse the DC characteristics of thin-film SOI transistors. The simulation incorporate a model for avalanche generation at the drain junction, together with both bulk and surface recombination with the SOI film. The simulator has been used to model the characteristics of both p-channel and n-channel transistors fabricated on the same substrate. Accurate simulation of threshold voltage for both types of transistor has been achieved by incorporating a model for excess donor states created during oxygen implantation. The simulator has been used to investigate some of the limitations on the performance of 1-μm transistors at high drain bias. The results are discussed briefly and qualitatively
Keywords :
digital simulation; electronic engineering computing; field effect transistors; semiconductor device models; semiconductor epitaxial layers; semiconductor-insulator boundaries; 1 micron; 2D numerical simulation; DC characteristics; O implantation; Si-SiO2-Si; avalanche generation; bulk recombination; drain junction; excess donor states; finite-difference discretization; high drain bias; model; n-channel transistors; p-channel transistors; short channel SOI transistors; surface recombination; thin-film SOI transistors; threshold voltage; transistor performance limitations; two-dimensional device simulator; Character generation; DC generators; Ionization; Laboratories; Numerical simulation; Radiative recombination; Semiconductor films; Semiconductor process modeling; Telecommunications; Thin film transistors;
Conference_Titel :
SOS/SOI Technology Workshop, 1988. Proceedings., 1988 IEEE
Conference_Location :
St. Simons Island, GA
DOI :
10.1109/SOI.1988.95399
