Sensitivity of metal oxide memristors to radiation-induced displacement damage

Over the last several years, various research groups have shown that metal oxide-based memristors or resistive random access memory (RRAM) components are tolerant to high levels of both displacement damage and ionizing dose. However, above certain thresholds of either the deposited displacement damage dose or the deposited ionizing dose, devices do respond to radiation. In this paper, the sensitivity of metal oxide memristor materials to radiation damage from various types of incident energetic ions is assessed.