Title :
SOI current and voltage reference sources for applications up to 300°C
Author :
Eggermont, J.-P. ; Dessard, V. ; Vandooren, A. ; Flandre, D. ; Colinge, J.P.
Author_Institution :
Alcatel Microelectron., Oudenaarde, Belgium
Abstract :
This work presents the potential of fully-depleted SOI technology to implement current and voltage reference sources for very wide temperature range applications. Design of these reference sources is realized using device measurements. Implementation results show temperature coefficient better than 100 ppm from room temperature to 300°C
Keywords :
MOS analogue integrated circuits; constant current sources; high-temperature electronics; reference circuits; silicon-on-insulator; 300 C; current reference source; fully depleted SOI technology; temperature coefficient; voltage reference source; CMOS technology; Laboratories; MOSFET circuits; Microelectronics; Resistors; Semiconductor films; Silicon; Temperature distribution; Temperature sensors; Threshold voltage;
Conference_Titel :
High Temperature Electronics Conference, 1998. HITEC. 1998 Fourth International
Conference_Location :
Albuquerque, NM
Print_ISBN :
0-7803-4540-1
DOI :
10.1109/HITEC.1998.676761
