DocumentCode
1586140
Title
Monolithic PIN-FET photoreceivers
Author
Nichols, D.T. ; Dutta, N.K. ; Lopata, J. ; Berger, P.R. ; Sivco, D. ; Cho, A.Y.
Author_Institution
AT&T Bell Lab., Murray Hill, NJ, USA
fYear
1993
Firstpage
478
Lastpage
481
Abstract
Monolithic PIN-FET photoreceivers were investigated in both the InP and GaAs systems. The GaAs-based circuits consist of a single growth step in which the p-i-n diode was grown on top of the MESFET. The circuits exhibit flatband gains as high as 17 dB and bandwidths of 2.0 GHz. The InP circuits feature regrown MODFETs integrated with p-i-n diodes. These devices exhibit a gain of 17 dB and a bandwidth of 10 GHz
Keywords
HEMT integrated circuits; III-V semiconductors; MESFET integrated circuits; gallium arsenide; indium compounds; integrated optoelectronics; optical receivers; p-i-n photodiodes; 10 GHz; 17 dB; 2 GHz; GaAs; III-V semiconductor; InP; MESFET; PIN-FET photoreceivers; flatband gains; monolithic integration; p-i-n diode; regrown MODFET; single growth step; Bandwidth; Gallium arsenide; HEMTs; Indium phosphide; MESFETs; MODFET circuits; Molecular beam epitaxial growth; P-i-n diodes; PIN photodiodes; Substrates;
fLanguage
English
Publisher
ieee
Conference_Titel
ASIC Conference and Exhibit, 1993. Proceedings., Sixth Annual IEEE International
Conference_Location
Rochester, NY
Print_ISBN
0-7803-1375-5
Type
conf
DOI
10.1109/ASIC.1993.410763
Filename
410763
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