Title :
Thick film hybrid packaging techniques for 500°C operation
Author :
Salmon, Jay S. ; Johnson, R. Wayne ; Palmer, Mide
Author_Institution :
Dept. of Electr. Eng., Auburn Univ., AL, USA
Abstract :
A source follower circuit was constructed on a custom alumina substrate using thick film hybrid techniques and 4H-SiC JFETs. The circuit is intended for long term operation at a temperature of 300°C. For this reason, the various components of the circuit assembly (wire bonds, resistors, die attach, substrate metalization) have undergone accelerated reliability testing at an elevated temperature of 500°C. These experiments have confirmed the operation of SiC based circuits at a temperature of 300°C, but also, prove the plausibility of future circuits operating in the 500°C range
Keywords :
JFET integrated circuits; high-temperature electronics; hybrid integrated circuits; integrated circuit packaging; integrated circuit reliability; semiconductor materials; silicon compounds; thick film circuits; 300 to 500 C; 4H-SiC JFET; SiC; accelerated reliability testing; custom alumina substrate; die attach; elevated temperature operation; resistor; source follower circuit; substrate metallization; thick film hybrid packaging; wire bond; Assembly; Circuit testing; JFETs; Packaging; Resistors; Substrates; Temperature; Thick film circuits; Thick films; Wire;
Conference_Titel :
High Temperature Electronics Conference, 1998. HITEC. 1998 Fourth International
Conference_Location :
Albuquerque, NM
Print_ISBN :
0-7803-4540-1
DOI :
10.1109/HITEC.1998.676769
