Title :
Capacitive silicon pressure sensor based on the one-side wafer processing
Author :
Lysko, J.M. ; Stolarski, E. ; Jachowicz, R.S.
Author_Institution :
Inst. of Electron Technol., Warsaw, Poland
Abstract :
A novel design of a capacitive pressure sensor and a fabrication method based on one-side wafer processing are proposed. A matrix of 50 sensor cells connected in parallel serves as a single pressure sensor. This construction gives both an increase of the sensor capacitance level and a higher yield rate of the sensor fabrication. A detailed description of the single sensor cell construction and the technology of fabrication is presented. Some measurement results and their evaluations for pressure tests in the 20 atm range are also discussed.<>
Keywords :
electric sensing devices; elemental semiconductors; integrated circuit technology; pressure transducers; semiconductor technology; silicon; 20 atm; Si; capacitive pressure sensor; fabrication; matrix; one-side wafer processing; parallel connection; pressure tests; semiconductor technology; sensor cells; Bonding; Capacitance; Capacitive sensors; Capacitors; Dielectric substrates; Electrodes; Fabrication; Glass; Regions; Silicon;
Conference_Titel :
Solid-State Sensors and Actuators, 1991. Digest of Technical Papers, TRANSDUCERS '91., 1991 International Conference on
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-87942-585-7
DOI :
10.1109/SENSOR.1991.148973
