Title :
TiN and ZrN based ohmic contacts to n-GaN
Author :
Mohney, S.E. ; Luther, B.P. ; Wolter, S.D. ; Jackson, T.N. ; Karlicek, R.F., Jr. ; Kern, R.S.
Author_Institution :
Dept. of Mater. Sci. & Eng., Pennsylvania State Univ., University Park, PA, USA
Abstract :
Metal electrical contacts that exhibit good thermal stability and desirable electrical characteristics are required for the development of high temperature devices based on the III-V nitrides. To make improvements on existing contacts or to develop new ones, information on the metallurgy of these contacts is needed. In this work, selected early transition metal-based ohmic contacts to n-GaN are examined from both a high-temperature materials chemistry and electrical standpoint
Keywords :
III-V semiconductors; annealing; gallium compounds; ohmic contacts; thermal stability; titanium compounds; zirconium compounds; GaN-TiN; GaN-ZrN; III-V nitride; annealing; electrical characteristics; high temperature device; materials chemistry; metallurgy; n-GaN; ohmic contact; thermal stability; transition metal; Annealing; Argon; Contact resistance; Gallium nitride; Laboratories; Ohmic contacts; Temperature; Thermodynamics; Tin; Titanium;
Conference_Titel :
High Temperature Electronics Conference, 1998. HITEC. 1998 Fourth International
Conference_Location :
Albuquerque, NM
Print_ISBN :
0-7803-4540-1
DOI :
10.1109/HITEC.1998.676774
