Some reliability aspects of high temperature ICs

Author

Brusius, Phillip

Author_Institution

Honeywell Solid State Electron. Center, Plymouth, MN, USA

fYear

1998

Firstpage

151

Lastpage

154

Abstract

There are many physical mechanisms that can disrupt electrical performance at high temperatures. These mechanisms need to be controlled or eliminated in order for the parts to operate reliably for extended periods of time. Four specific high temperature failure mechanisms are described in this paper. Two of these mechanisms relate to the package - leakage current and wire bond resistance; the other two involve the thin films on the integrated circuit tungsten electromigration and resistor stability

Keywords

ceramic packaging; circuit stability; electromigration; failure analysis; integrated circuit interconnections; integrated circuit packaging; integrated circuit reliability; lead bonding; leakage currents; monolithic integrated circuits; thin film resistors; tungsten; IC package; W; W electromigration; electrical performance; high temperature ICs; high temperature failure mechanisms; package leakage current; physical mechanisms; reliability; resistor stability; thin films; wire bond resistance; Bonding; Electromigration; Failure analysis; Integrated circuit packaging; Integrated circuit reliability; Leakage current; Temperature; Thin film circuits; Tungsten; Wire;

fLanguage

English

Publisher

ieee

Conference_Titel

High Temperature Electronics Conference, 1998. HITEC. 1998 Fourth International

Conference_Location

Albuquerque, NM

Print_ISBN

0-7803-4540-1

Type

conf

DOI

10.1109/HITEC.1998.676778

Filename

676778