Title :
Some reliability aspects of high temperature ICs
Author :
Brusius, Phillip
Author_Institution :
Honeywell Solid State Electron. Center, Plymouth, MN, USA
Abstract :
There are many physical mechanisms that can disrupt electrical performance at high temperatures. These mechanisms need to be controlled or eliminated in order for the parts to operate reliably for extended periods of time. Four specific high temperature failure mechanisms are described in this paper. Two of these mechanisms relate to the package - leakage current and wire bond resistance; the other two involve the thin films on the integrated circuit tungsten electromigration and resistor stability
Keywords :
ceramic packaging; circuit stability; electromigration; failure analysis; integrated circuit interconnections; integrated circuit packaging; integrated circuit reliability; lead bonding; leakage currents; monolithic integrated circuits; thin film resistors; tungsten; IC package; W; W electromigration; electrical performance; high temperature ICs; high temperature failure mechanisms; package leakage current; physical mechanisms; reliability; resistor stability; thin films; wire bond resistance; Bonding; Electromigration; Failure analysis; Integrated circuit packaging; Integrated circuit reliability; Leakage current; Temperature; Thin film circuits; Tungsten; Wire;
Conference_Titel :
High Temperature Electronics Conference, 1998. HITEC. 1998 Fourth International
Conference_Location :
Albuquerque, NM
Print_ISBN :
0-7803-4540-1
DOI :
10.1109/HITEC.1998.676778
