DocumentCode :
1586650
Title :
Interconnection technology for new wide band gap semiconductors
Author :
Cyrille, Duchesne ; Philippe, Cussac ; Xavier, Cleon
Author_Institution :
CIRTEM, Tarbes, France
fYear :
2013
Firstpage :
1
Lastpage :
10
Abstract :
The aim of this works is to present the interconnection technology bump that allows a double side cooling for power modules. Research will focus on pushing the limits necessitated by the increase of power density on the components to ensure optimum integration. We present design principles, electrical characteristics and thermal gains obtained by the use of this technology.
Keywords :
cooling; integrated circuit interconnections; modules; power integrated circuits; wide band gap semiconductors; double side cooling; electrical characteristics; interconnection technology bump; power density; power integrated circuit; power modules; thermal design principles; thermal gains; wide band gap semiconductors; Assembly; Metallization; Multichip modules; Substrates; Hybrid power integration; Packaging; Power integrated circuit; Thermaldesign; wide band gap devices;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Power Electronics and Applications (EPE), 2013 15th European Conference on
Conference_Location :
Lille
Type :
conf
DOI :
10.1109/EPE.2013.6634619
Filename :
6634619
Link To Document :
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