• DocumentCode
    1586656
  • Title

    Electronic phenomena on switch contacts

  • Author

    Filippakou, M.P. ; Karagiannopoulos, C.G. ; Bourkas, P.D.

  • Author_Institution
    Dept. of Electr. Eng., Nat. Tech. Univ. of Athens, Greece
  • Volume
    2
  • fYear
    34881
  • Firstpage
    914
  • Abstract
    Experimental studies presented in this paper indicate that stationary and sliding contacts of practical applications may exhibit nonlinear behaviour. This can be attributed to the microstructures formed on the apparent contact surface. The physical phenomena which appear in this case seem to be dependent on the degradation of the contacts and the increase in thickness of the overlayers. The conductivity through thin interfacial layers (<50 Å) is attributed to quantum mechanical tunnelling and through thicker interfacial layers to field emission and impact ionisation. The well-established metal-insulator-metal theory provides the required theoretical basis for the interpretation of the measurements. Based on the above, an equivalent circuit is proposed, which is valid for both stationary and sliding contacts
  • Keywords
    crystal microstructure; electrical conductivity; electrical contacts; equivalent circuits; field emission; impact ionisation; switchgear; apparent contact surface; conductivity; contact degradation; electronic phenomena; equivalent circuit; field emission; impact ionisation; metal-insulator-metal theory; microstructures; nonlinear behaviour; overlayers thickness increase; quantum mechanical tunnelling; sliding contacts; stationary contacts; switch contacts; thin interfacial layers; Conductivity; Contacts; Degradation; Equivalent circuits; Impact ionization; Metal-insulator structures; Microstructure; Quantum mechanics; Switches; Tunneling;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Industrial Electronics, 1995. ISIE '95., Proceedings of the IEEE International Symposium on
  • Conference_Location
    Athens
  • Print_ISBN
    0-7803-7369-3
  • Type

    conf

  • DOI
    10.1109/ISIE.1995.497308
  • Filename
    497308