• DocumentCode
    1586793
  • Title

    High-temperature storage and thermal cycling studies of Heraeus-Cermalloy thick film and Dale power wirewound resistors

  • Author

    Naefe, Jeffrey E. ; Johnson, R. Wayne ; Grzybowski, Richawrd R.

  • Author_Institution
    Dept. of Electr. Eng., Auburn Univ., AL, USA
  • fYear
    1998
  • Firstpage
    191
  • Lastpage
    206
  • Abstract
    In this work, the high temperature testing of power wirewound and thick film resistors is reported. The resistance values of the Dale power wirewound resistors tested were 1 Ω, 100 Ω, and 10 kΩ with rated power levels of 5 W and 25 W. Stability with long term storage (10000 hrs) at 300°C has been measured for the wirewound resistors unpowered and powered at 20% of rated power. The Dale resistors have also completed 1000 thermal cycles with a temperature range from -55°C to 225°C. Additionally TCR measurements were performed on these resistors. Three 900 Series thick film resistor pastes from Heraeus-Cermalloy were studied: 100 Ω/□, 1 KΩ/□, 10 KΩ/□. The temperature coefficient of resistance (TCR) was measured from 27°C to 500°C in 50°C increments. A 2×2 matrix of variables was included in the 300°C storage test: untrimmed resistors, resistors trimmed up 50% in value, unpowered, and powered at 1/8 W. Palladium/Silver was the initial termination choice for these 300°C studies, but silver migration quickly became a problem. Gold terminated Heraeus-Cermalloy resistors were manufactured and have completed over 4500 hours of storage at 300°C
  • Keywords
    high-temperature electronics; power electronics; thick film resistors; -55 to 225 C; 1 kohm; 1 ohm; 100 ohm; 27 to 500 C; 300 C; 5 to 25 W; Dale power wirewound resistor; Heraeus-Cermalloy thick film resistor; TCR; high temperature storage; life testing; stability; thermal cycling; Electrical resistance measurement; Power measurement; Resistors; Silver; Stability; Temperature; Testing; Thermal resistance; Thermal variables measurement; Thick films;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    High Temperature Electronics Conference, 1998. HITEC. 1998 Fourth International
  • Conference_Location
    Albuquerque, NM
  • Print_ISBN
    0-7803-4540-1
  • Type

    conf

  • DOI
    10.1109/HITEC.1998.676787
  • Filename
    676787