DocumentCode
1586846
Title
A 90 V breakdown high temperature SOI lateral power nMOSFET
Author
Tsang, Joseph C. ; McKitterick, John B. ; Zolnier, Joel A. ; O´Connor, J.M.
Author_Institution
AlliedSignal Microelectron. & Technol. Center, Columbia, MD, USA
fYear
1998
Firstpage
215
Lastpage
218
Abstract
A high-temperature lateral power MOS field-effect transistor on silicon-on-insulator (SOI) material has been demonstrated to operate up to at least 300°C. This device is targeted initially for high-temperature applications such as engine control and down-hole oil exploration. This power device is easily integrable in our standard digital process now, enabling high temperature, mixed-signal technology. Prototype solenoid drivers and torque motor drivers have been demonstrated using this technology
Keywords
driver circuits; high-temperature electronics; oil technology; power MOSFET; silicon-on-insulator; 25 to 300 degC; 90 V; SOI; down-hole oil exploration; engine control; high temperature electronics; lateral power nMOSFET; mixed-signal technology; power device; solenoid drivers; torque motor drivers; Driver circuits; Electric breakdown; Engines; FETs; MOSFET circuits; Petroleum; Prototypes; Silicon on insulator technology; Solenoids; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
High Temperature Electronics Conference, 1998. HITEC. 1998 Fourth International
Conference_Location
Albuquerque, NM
Print_ISBN
0-7803-4540-1
Type
conf
DOI
10.1109/HITEC.1998.676789
Filename
676789
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