Title :
HT2000 high temperature gate array
Author :
Passow, Craig ; Gingerich, Ben ; Swenson, Gregg
Author_Institution :
Honeywell Solid State Electron. Center, Plymouth, MN, USA
Abstract :
Honeywell continues to expand its line of integrated circuit products intended for harsh high temperature applications with the HT2000 series of gate arrays. The HT2000 arrays use a sea-of-transistors architecture with sizes from 5000 to 200000 usable gates. The family is fabricated with Honeywell´s fully isolated 0.8 μm, 3 layer metal, 5 volt High Temperature MOS (HTMOSTM) process. The HT2000 arrays are able to support a wide range of high density digital designs. The low leakage and high speed characteristics of the HTMOS process make operation at 20 MHz clock frequencies possible over a broad -55°C to 225°C temperature range
Keywords :
MOS logic circuits; high-speed integrated circuits; high-temperature electronics; logic arrays; -55 to 225 degC; 0.8 micron; 20 MHz; 5 V; Honeywell HT2000; clock frequencies; high density digital designs; high speed characteristics; high temperature MOS; high temperature gate array; sea-of-transistors architecture; Consumer electronics; Data acquisition; Engines; Logic arrays; Packaging; Process control; Remote monitoring; Space technology; Temperature control; Temperature distribution;
Conference_Titel :
High Temperature Electronics Conference, 1998. HITEC. 1998 Fourth International
Conference_Location :
Albuquerque, NM
Print_ISBN :
0-7803-4540-1
DOI :
10.1109/HITEC.1998.676790
