Ultra-fast silicon-based optoelectronic devices on a 300 mm CMOS platform for on-chip optical interconnects

Silicon-based photonics has generated a strong interest in the last years, mainly for optical telecommunications and optical interconnects in microelectronic circuits and industrial breakthroughs have been even performed by companies like IBM, Luxtera, INTEL, and ST Microelectronics. The main future rationales are the reduction of photonic system costs, the increase of the number of functionalities on the same integrated chip by combining photonics and electronics, and the decrease of power consumption. During the DACINCT workshop, we will present recent results on ultrafast optical modulators based on carrier depletion effect and germanium photodetectors integrated in silicon on insulator (SOI) waveguides. Both optoelectronic devices have been fabricated on a CMOS 300mm platform. The achieved performances constitute a new milestone towards new generations of several Tb/s chips merging electronics and photonics.