The nature of high-temperature instability in fully depleted SOI IM n-MOSFETs

Author

Nazarov, A.N. ; Barchuk, I.P. ; Colinge, J.P.

Author_Institution

Inst. of Semicond. Phys., Acad. of Sci., Kiev, Ukraine

fYear

1998

Firstpage

226

Lastpage

229

Abstract

A high-temperature drain current “jump” in fully depleted SOI n-channel MOSFET is reported for the first time. The phenomenon appears in SIMOX SOI MOSFETs at temperatures above 200°C. After a negative voltage has been applied to the substrate. A direct link of the current “jump” with the positive charge formation in the buried oxide (BOX) is demonstrated. The current jump, called “front channel high-temperature kink-effect” is explained by the compensation of positive charges in the (BOX), near the BOX-silicon film interface, by electrons

Keywords

MOSFET; SIMOX; buried layers; compensation; elemental semiconductors; silicon; 200 C; BOX-silicon film interface; SIMOX SOI MOSFET; SOI IM n-MOSFET; Si; buried oxide; compensation; current jump; front channel high-temperature kink-effect; high-temperature drain current; high-temperature instability; positive charge formation; positive charges; Current measurement; Electrons; MOSFET circuits; Physics computing; Shape; Silicon; Substrates; Temperature dependence; Temperature measurement; Threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

High Temperature Electronics Conference, 1998. HITEC. 1998 Fourth International

Conference_Location

Albuquerque, NM

Print_ISBN

0-7803-4540-1

Type

conf

DOI

10.1109/HITEC.1998.676792

Filename

676792