Title :
A new high temperature solid-state microelectronic carbon monoxide gas sensor
Author :
Gurbuz, Y. ; Kang, W.P. ; Davidson, J.L. ; Zhou, Q. ; Kerns, D.V. ; Henderson, T.
Author_Institution :
Dept. of Electr. & Comput. Eng., Vanderbilt Univ., Nashville, TN, USA
Abstract :
A new solid-state microelectronic based carbon monoxide (CO) gas sensor, catalytic-SnOx/i-diamond/p+-diamond/p+ CAIS diode, has been developed. The CO gas sensing performance and detection mechanism of the new sensor have been studied by using I-V and I-t characteristics as a function of gas concentration over a wide temperature range (50-500°C). The gas sensitivity of the sensor is high, repeatable, and reproducible. The response time is in seconds to a small concentration of CO gas. Gas detection mechanism of the new sensor is attributed to the modification of the oxygen vacancies in the SnOx layer through the reduction reaction between pre-adsorbed oxygen and CO gases. This new diamond-based microelectronic gas sensor could be applied for the detection of oxidizing and reducing gases over a higher and wider temperature range than currently possible
Keywords :
diamond; elemental semiconductors; gas sensors; high-temperature electronics; platinum; semiconductor diodes; tin compounds; vacancies (crystal); 50 to 500 degC; CAIS diode; I-V characteristics; I-t characteristics; Pt-SnO2-C; detection mechanism; gas concentration; oxidizing gases; reducing gases; reduction reaction; response time; solid-state microelectronic gas sensor; vacancies; Computer aided instruction; Delay; Diodes; Gas detectors; Gases; Microelectronics; Sensor phenomena and characterization; Solid state circuits; Temperature distribution; Temperature sensors;
Conference_Titel :
High Temperature Electronics Conference, 1998. HITEC. 1998 Fourth International
Conference_Location :
Albuquerque, NM
Print_ISBN :
0-7803-4540-1
DOI :
10.1109/HITEC.1998.676793
