DocumentCode :
1587002
Title :
Measurement of the cylinder pressure in combustion engines with a piezoresistive β-SiC-on-SOI pressure sensor
Author :
von Berg, J. ; Ziermann, R. ; Reichert, W. ; Obermeier, E. ; Eickhoff, M. ; Krötz, G. ; Thoma, U. ; Cavalloni, C. ; Nendza, J.P.
Author_Institution :
Microsensor & Actuator Technol. Center, Tech. Univ. Berlin, Germany
fYear :
1998
Firstpage :
245
Lastpage :
249
Abstract :
For measuring the cylinder pressure in combustion engines a high temperature pressure sensor has been developed. The sensor is made of a piezoresistive β-SiC-on-SOI (SiCOI) sensor chip and a specially designed housing. The SiCOI sensor was characterized under static pressure up to 20 MPa. The sensitivity of the sensor at room temperature is approximately 1.9 mV/MPa and decreases to about 1.2 mV/MPa at 300°C. For monitoring the dynamic cylinder pressure in the combustion chamber the SiCOI sensor was placed into the cylinder head of a gasoline engine. The measurements were performed at 1500 rpm under different loads, and for comparison a quartz pressure transducer from Kistier was used as a reference. The maximum pressure at partial load operation amounts to about 2.0 MPa. The difference between the calibrated SiCOI sensor and the reference sensor is significantly less than 0.1 MPa during the whole operation
Keywords :
high-temperature electronics; internal combustion engines; piezoelectric semiconductors; piezoresistive devices; pressure measurement; pressure sensors; semiconductor materials; silicon compounds; silicon-on-insulator; 0 to 2.0 MPa; 300 degC; SiC-Si; combustion engines; cylinder head; cylinder pressure; dynamic cylinder pressure; gasoline engine; high temperature pressure sensor; partial load operation; piezoresistive SOI pressure sensor; static pressure; Combustion; Engine cylinders; Monitoring; Performance evaluation; Petroleum; Piezoresistance; Pressure measurement; Semiconductor device measurement; Sensor phenomena and characterization; Temperature sensors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
High Temperature Electronics Conference, 1998. HITEC. 1998 Fourth International
Conference_Location :
Albuquerque, NM
Print_ISBN :
0-7803-4540-1
Type :
conf
DOI :
10.1109/HITEC.1998.676796
Filename :
676796
Link To Document :
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