DocumentCode
1587002
Title
Measurement of the cylinder pressure in combustion engines with a piezoresistive β-SiC-on-SOI pressure sensor
Author
von Berg, J. ; Ziermann, R. ; Reichert, W. ; Obermeier, E. ; Eickhoff, M. ; Krötz, G. ; Thoma, U. ; Cavalloni, C. ; Nendza, J.P.
Author_Institution
Microsensor & Actuator Technol. Center, Tech. Univ. Berlin, Germany
fYear
1998
Firstpage
245
Lastpage
249
Abstract
For measuring the cylinder pressure in combustion engines a high temperature pressure sensor has been developed. The sensor is made of a piezoresistive β-SiC-on-SOI (SiCOI) sensor chip and a specially designed housing. The SiCOI sensor was characterized under static pressure up to 20 MPa. The sensitivity of the sensor at room temperature is approximately 1.9 mV/MPa and decreases to about 1.2 mV/MPa at 300°C. For monitoring the dynamic cylinder pressure in the combustion chamber the SiCOI sensor was placed into the cylinder head of a gasoline engine. The measurements were performed at 1500 rpm under different loads, and for comparison a quartz pressure transducer from Kistier was used as a reference. The maximum pressure at partial load operation amounts to about 2.0 MPa. The difference between the calibrated SiCOI sensor and the reference sensor is significantly less than 0.1 MPa during the whole operation
Keywords
high-temperature electronics; internal combustion engines; piezoelectric semiconductors; piezoresistive devices; pressure measurement; pressure sensors; semiconductor materials; silicon compounds; silicon-on-insulator; 0 to 2.0 MPa; 300 degC; SiC-Si; combustion engines; cylinder head; cylinder pressure; dynamic cylinder pressure; gasoline engine; high temperature pressure sensor; partial load operation; piezoresistive SOI pressure sensor; static pressure; Combustion; Engine cylinders; Monitoring; Performance evaluation; Petroleum; Piezoresistance; Pressure measurement; Semiconductor device measurement; Sensor phenomena and characterization; Temperature sensors;
fLanguage
English
Publisher
ieee
Conference_Titel
High Temperature Electronics Conference, 1998. HITEC. 1998 Fourth International
Conference_Location
Albuquerque, NM
Print_ISBN
0-7803-4540-1
Type
conf
DOI
10.1109/HITEC.1998.676796
Filename
676796
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