Title :
High speed and high performance long wavelength OEICs using heterojunction bipolar transistors
Author :
Chandrasekhar, S. ; Lunardi, L.M. ; Liou, K.Y.
Author_Institution :
AT&T Bell Lab., Holmdel, NJ, USA
Abstract :
High-speed heterojunction bipolar transistors (HBTs) in the InP/InGaAs material system have been monolithically integrated with p-i-n photodetecters as receivers and with quantum well lasers as transmitters for potential applications in long wavelength lightwave communications. Speeds well beyond 5 Gb/s have been achieved with excellent performance
Keywords :
III-V semiconductors; bipolar integrated circuits; gallium arsenide; heterojunction bipolar transistors; indium compounds; integrated optoelectronics; optical receivers; optical transmitters; p-i-n photodiodes; quantum well lasers; very high speed integrated circuits; III-V semiconductor; InP-InGaAs; heterojunction bipolar transistors; high performance; high-speed; long wavelength OEIC; monolithically integrated; p-i-n photodetecters; quantum well lasers; receivers; transmitters; Bandwidth; Epitaxial growth; Epitaxial layers; Heterojunction bipolar transistors; Molecular beam epitaxial growth; Optical materials; Optical transmitters; Optoelectronic devices; PIN photodiodes; Photonic integrated circuits;
Conference_Titel :
ASIC Conference and Exhibit, 1993. Proceedings., Sixth Annual IEEE International
Conference_Location :
Rochester, NY
Print_ISBN :
0-7803-1375-5
DOI :
10.1109/ASIC.1993.410766
