High speed and high performance long wavelength OEICs using heterojunction bipolar transistors

Author

Chandrasekhar, S. ; Lunardi, L.M. ; Liou, K.Y.

Author_Institution

AT&T Bell Lab., Holmdel, NJ, USA

fYear

1993

Firstpage

490

Lastpage

493

Abstract

High-speed heterojunction bipolar transistors (HBTs) in the InP/InGaAs material system have been monolithically integrated with p-i-n photodetecters as receivers and with quantum well lasers as transmitters for potential applications in long wavelength lightwave communications. Speeds well beyond 5 Gb/s have been achieved with excellent performance

Keywords

III-V semiconductors; bipolar integrated circuits; gallium arsenide; heterojunction bipolar transistors; indium compounds; integrated optoelectronics; optical receivers; optical transmitters; p-i-n photodiodes; quantum well lasers; very high speed integrated circuits; III-V semiconductor; InP-InGaAs; heterojunction bipolar transistors; high performance; high-speed; long wavelength OEIC; monolithically integrated; p-i-n photodetecters; quantum well lasers; receivers; transmitters; Bandwidth; Epitaxial growth; Epitaxial layers; Heterojunction bipolar transistors; Molecular beam epitaxial growth; Optical materials; Optical transmitters; Optoelectronic devices; PIN photodiodes; Photonic integrated circuits;

fLanguage

English

Publisher

ieee

Conference_Titel

ASIC Conference and Exhibit, 1993. Proceedings., Sixth Annual IEEE International

Conference_Location

Rochester, NY

Print_ISBN

0-7803-1375-5

Type

conf

DOI

10.1109/ASIC.1993.410766

Filename

410766