Evaluation of 600V GaN and SiC Schottky diodes at different temperatures

Author

Badawi, Nasser ; Bahat-Treidel, E. ; Dieckerhoff, Sibylle ; Hilt, O. ; Wurfl, Joachim

Author_Institution

Power Electron. Res. Group, Tech. Univ. of Berlin, Berlin, Germany

fYear

2013

Firstpage

1

Lastpage

7

Abstract

This paper presents a newly developed 600V/2A Gallium Nitride (GaN) Schottky diode feasible for high frequency operation. Static and dynamic characteristics of the diode are experimentally evaluated at different temperatures and compared to a commercially available 600V/2A Silicon Carbide (SiC) Schottky diode. The test for both diodes is carried out under identical conditions. The proposed GaN diode shows very good switching properties and the potential to operate at very high switching frequencies and high temperatures with low switching loss.

Keywords

III-V semiconductors; Schottky diodes; gallium compounds; silicon compounds; wide band gap semiconductors; GaN; Schottky diodes; SiC; current 2 A; dynamic characteristics; high temperatures; low switching loss; static characteristics; very high switching frequencies; voltage 600 V; Current measurement; Gallium nitride; Schottky diodes; Silicon carbide; Temperature measurement; Voltage measurement; Device Characterisation; Gallium Nitride (GaN); Schottky Diode; Wide Bandgap Devices;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Electronics and Applications (EPE), 2013 15th European Conference on

Conference_Location

Lille

Type

conf

DOI

10.1109/EPE.2013.6634641

Filename

6634641