Title :
High-temperature mixed-signal ICs using silicon carbide CMOS technology
Author :
Chen, Jian-Song ; Ryu, Sei-Hyung ; Kornegay, Kevin T.
Author_Institution :
Sch. of Electr. & Comput. Eng., Purdue Univ., West Lafayette, IN, USA
Abstract :
The design and fabrication of a high-temperature mixed-signal IC using silicon carbide CMOS technology is presented. The mixed-signal IC implements an intelligent gate driver circuit intended for high-power switching devices. Using temperature-insensitive comparator, several functions including over-voltage, under-voltage, short-load and open-load detection are provided, all of which are operational up to 300°C. These ICs are ideally suited for harsh, high-temperature environments such as automotive and aircraft engines
Keywords :
CMOS integrated circuits; comparators (circuits); driver circuits; high-temperature electronics; mixed analogue-digital integrated circuits; power integrated circuits; silicon compounds; wide band gap semiconductors; SiC; aircraft engine; automotive engine; harsh environment; high-power switching device; high-temperature mixed-signal IC; intelligent gate driver circuit; open-load; over-voltage; short-load; silicon carbide CMOS technology; temperature-insensitive comparator; under-voltage; Aircraft propulsion; Aluminum; Boron; CMOS technology; Driver circuits; Intelligent sensors; Protection; Silicon carbide; Temperature sensors; Thermal conductivity;
Conference_Titel :
High Temperature Electronics Conference, 1998. HITEC. 1998 Fourth International
Conference_Location :
Albuquerque, NM
Print_ISBN :
0-7803-4540-1
DOI :
10.1109/HITEC.1998.676806
