Erosion traces on a single-crystal Si cathode in an undeveloped nanosecond vacuum breakdown

Author

Onischenko, S.A. ; Nefyodtsev, E.V. ; Batrakov, A.V. ; Proskurovsky, D.I.

Author_Institution

SB, Inst. of High Current Electron., Tomsk, Russia

fYear

2014

fDate

Sept. 28 2014-Oct. 3 2014

Firstpage

5

Lastpage

8

Abstract

We studied erosion traces on the surface of single-crystal silicon wafer cathodes in single vacuum discharges. The surface orientations of the wafers were {100} and {111}. The vacuum discharges were generated by short voltage pulses (20-80 ns, 200 kV) in gaps 1.5-3 mm wide. Each discharge resulted in several symmetric erosion patterns oriented along crystallographic directions. It was supposed that the formation of erosion patterns was much contributed by acoustic phenomena.

Keywords

electrochemical electrodes; elemental semiconductors; silicon; vacuum breakdown; Si; acoustic phenomena; crystallographic direction; erosion pattern formation; erosion traces; single vacuum discharges; single-crystal silicon wafer cathode surface; symmetric erosion pattern; time 20 ns to 80 ns; undeveloped nanosecond vacuum breakdown; voltage 200 kV; {100} surface orientation; {111} surface orientation; Cathodes; Discharges (electric); Silicon; Stress; Surface discharges; Vacuum breakdown;

fLanguage

English

Publisher

ieee

Conference_Titel

Discharges and Electrical Insulation in Vacuum (ISDEIV), 2014 International Symposium on

Conference_Location

Mumbai

Print_ISBN

978-1-4799-6750-6

Type

conf

DOI

10.1109/DEIV.2014.6961605

Filename

6961605