Title :
Investigation of high temperature effects on MOSFET transconductance (gm)
Author :
Osman, Ashraf A. ; Osman, Mohamed A.
Author_Institution :
Sch. of Electr. Eng. & Comput. Sci., Washington State Univ., Pullman, WA, USA
Abstract :
High temperature effects on CMOS transconductance (gm) are investigated in linear and saturation regions. Measured gm in the saturation region at temperatures between 27-200°C were observed to intersect at one gate bias point. However, no such point was observed in the linear region. Similar characteristics was produced using analytical MOSFET current model that incorporate temperature dependence of device parameters
Keywords :
MOSFET; high-temperature effects; semiconductor device models; CMOS transconductance; MOSFET transconductance; analytical MOSFET current model; device parameters; gate bias point; high temperature effects; linear region; linear regions; saturation regions; temperature dependence; Analog circuits; Circuit simulation; Degradation; MOSFET circuits; Robust stability; SPICE; Semiconductor device modeling; Temperature dependence; Threshold voltage; Transconductance;
Conference_Titel :
High Temperature Electronics Conference, 1998. HITEC. 1998 Fourth International
Conference_Location :
Albuquerque, NM
Print_ISBN :
0-7803-4540-1
DOI :
10.1109/HITEC.1998.676808
