Transient robustness testing of silicon carbide (SiC) power MOSFETs

Author

Fayyaz, Asad ; Li Yang ; Castellazzi, Alberto

Author_Institution

Power Electron., Machines & Control Group, Univ. of Nottingham, Nottingham, UK

fYear

2013

Firstpage

1

Lastpage

10

Abstract

This paper presents the development of a unified test set-up and experimental results of the robustness characterisation of new generation of silicon carbide (SiC) power MOSFETs. In particular, unclamped inductive switching (UIS) and short-circuit withstand capability (SC) are investigated, with the aim of assessing the actual limits of operation of the devices and highlighting the underlying physical mechanisms. An electro-thermal device model is used to support the experimental analysis and interpret the observations.

Keywords

power MOSFET; semiconductor device models; semiconductor device testing; silicon compounds; transient analysis; wide band gap semiconductors; SiC; UIS; electrothermal device model; physical mechanisms; short-circuit withstand capability; silicon carbide power MOSFET; transient robustness testing; unclamped inductive switching; unified test set-up; Logic gates; MOSFET; Performance evaluation; Robustness; Silicon carbide; Switches; Testing; Device characterization; MOSFET; Power semiconductor device; Robustness; Silicon Carbide (SiC); Wide bandgap devices;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Electronics and Applications (EPE), 2013 15th European Conference on

Conference_Location

Lille

Type

conf

DOI

10.1109/EPE.2013.6634645

Filename

6634645