Title :
New result in 6H SiC “site-competition” epitaxy
Author :
Zelenin, Viktor V. ; Lebedev, A.A. ; Rastegaeva, Marina G. ; Davydov, Denis V. ; Chelnokov, Valentin E.
Author_Institution :
A.F. Ioffe Physicotech. Inst., Acad. of Sci., St. Petersburg, Russia
Abstract :
In this work we report on an investigation of 6H-SiC epitaxial layers grown by using atmospheric pressure CVD with a CH4-SiH 4-H2 gas system. The epilayers are characterised by volt-capacitance measurements and preliminary results of i-DLTS spectroscopy
Keywords :
deep level transient spectroscopy; electrical conductivity; semiconductor epitaxial layers; semiconductor growth; silicon compounds; vapour phase epitaxial growth; wide band gap semiconductors; 6H-SiC epitaxial layer; SiC; atmospheric pressure CVD growth; i-DLTS spectroscopy; site-competition epitaxy; volt-capacitance measurement; Argon; Capacitance-voltage characteristics; Conductivity; Epitaxial growth; Epitaxial layers; Gases; Inductors; Semiconductor device doping; Silicon carbide; Substrates;
Conference_Titel :
High Temperature Electronics Conference, 1998. HITEC. 1998 Fourth International
Conference_Location :
Albuquerque, NM
Print_ISBN :
0-7803-4540-1
DOI :
10.1109/HITEC.1998.676809
