Title :
Power cycling ageing tests at 200°C of SiC assemblies for high temperature electronics
Author :
Ibrahim, Amin ; Khatir, Z.
Author_Institution :
Lab. of New Technol., IFSTTAR, Versailles, France
Abstract :
The reliability of power electronic modules is of utmost importance all the more so since they would be exposed to high ambient temperatures and frequent power cycling. Aging tests at 200°C have been done using power cycling in order to study some packaging materials for high temperature power electronics. Junction temperature swings were performed between 196°C and 245°C and tests have concerned the die attach, wire bond and die metallization materials. Experimental results have shown that AuGe solder material is highly resistant comparatively to a high leaded material. Furthermore, for die top-metal/wire couple, gold material exhibits a better performance compared to Aluminum.
Keywords :
ageing; germanium alloys; gold alloys; lead bonding; metallisation; power semiconductor devices; semiconductor device reliability; silicon compounds; solders; wide band gap semiconductors; AuGe; SiC; SiC assemblies; die attach; die metallization materials; die top-metal/wire couple; gold material; high temperature electronics; junction temperature; power cycling ageing tests; power electronic modules; reliability; solder material; temperature 196 degC to 245 degC; wire bond; Aging; Current measurement; Junctions; Metallization; Temperature measurement; Temperature sensors; Voltage measurement; High temperature electronics; Power cycling; Silicon Carbide; Thermal Stress;
Conference_Titel :
Power Electronics and Applications (EPE), 2013 15th European Conference on
Conference_Location :
Lille
DOI :
10.1109/EPE.2013.6634647
