• DocumentCode
    1587417
  • Title

    Silicon carbide as a material for high temperature posistors

  • Author

    Bakin, A.S.

  • fYear
    1998
  • Firstpage
    318
  • Lastpage
    319
  • Abstract
    Elaboration of silicon carbide based material with a positive temperature coefficient of resistance (PTC) sufficient for operation as a posistor is possible using heteropolytype transitions with abrupt change of electrophysical properties. Material for high-temperature posistors with PTC values in the range 0.03-0.10 K-1 and working temperatures 300-1000°C is obtained
  • Keywords
    high-temperature electronics; resistors; silicon compounds; 300 to 1000 C; SiC; electrophysical properties; heteropolytype transitions; high temperature posistors; high-temperature posistors; positive temperature coefficient of resistance; silicon carbide; working temperatures; Annealing; Ceramics; Conductivity; Furnaces; Microelectronics; Phase change materials; Powders; Silicon carbide; Temperature dependence; Temperature distribution;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    High Temperature Electronics Conference, 1998. HITEC. 1998 Fourth International
  • Conference_Location
    Albuquerque, NM
  • Print_ISBN
    0-7803-4540-1
  • Type

    conf

  • DOI
    10.1109/HITEC.1998.676812
  • Filename
    676812
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1587417