Title :
SiC device new technology
Author :
Gerasimov, A.B. ; Bibilashvili, A.P. ; Bokolochadze, Z.G. ; Kazarov, R.E. ; Samadashvili, Z.D. ; Svimonishvili, T.V. ; Vepkhvadze, M.T. ; Ukhin, N.A.
Author_Institution :
Tbilisi State Univ.
Abstract :
SiC is known to be quite a perspective material for high-temperature electronics. However the disadvantage is the high temperature and the complexity of device formation technological process in comparison with Si. So the simplification of technology proves to be actual. This abstract presents information on our new low temperature technology for electronic devices on SiC without multilayer epitaxy. We studied the process of photostimulated diffusion, annealing and other processes used in semiconductor device technology. This brought to technology of ohmic contacts, Schottky barriers, p-n junction and MOS structures on SiC. The results witness that low temperature technology proposed can be successfully used for SiC MESFET and MOSFET devices
Keywords :
MIS structures; MOSFET; Schottky barriers; Schottky gate field effect transistors; ohmic contacts; p-n junctions; semiconductor technology; silicon compounds; MOS structures; Schottky barriers; SiC MESFET devices; SiC MOSFET devices; SiC device new technology; annealing; device formation technological process; high-temperature electronics material; low temperature technology; ohmic contacts; p-n junction; photostimulated diffusion; semiconductor device technology; Annealing; Epitaxial growth; MESFETs; Nonhomogeneous media; Ohmic contacts; P-n junctions; Schottky barriers; Semiconductor devices; Silicon carbide; Temperature;
Conference_Titel :
High Temperature Electronics Conference, 1998. HITEC. 1998 Fourth International
Conference_Location :
Albuquerque, NM
Print_ISBN :
0-7803-4540-1
DOI :
10.1109/HITEC.1998.676813
