Title :
Silicon carbide microheater
Author :
Korlyakov, A.V. ; Luchinin, V.V.
Author_Institution :
Microtechnol. Centre, St. Petersburg State Electrotech. Univ., Russia
Abstract :
Using a silicon carbide meander on a dielectric substrate as a basis, we have made SiC microheaters, from 10 to 1000 microns in size, which are long-term operable in air with the heater unit temperature above 1000°C. The use of a membrane in the microheater design has made it possible to essentially reduce the power consumption and improve persistence properties
Keywords :
heating elements; high-temperature electronics; membranes; micromechanical devices; semiconductor materials; silicon compounds; 1000 C; SiC; dielectric substrate; meander; membrane; persistence; power consumption; silicon carbide microheater; Biomembranes; Conducting materials; Energy consumption; Resistance heating; Silicon carbide; Temperature sensors; Thermal conductivity; Thermal expansion; Thermal resistance; Thermal stability;
Conference_Titel :
High Temperature Electronics Conference, 1998. HITEC. 1998 Fourth International
Conference_Location :
Albuquerque, NM
Print_ISBN :
0-7803-4540-1
DOI :
10.1109/HITEC.1998.676814
