DocumentCode
1587452
Title
Silicon carbide microheater
Author
Korlyakov, A.V. ; Luchinin, V.V.
Author_Institution
Microtechnol. Centre, St. Petersburg State Electrotech. Univ., Russia
fYear
1998
Firstpage
322
Lastpage
323
Abstract
Using a silicon carbide meander on a dielectric substrate as a basis, we have made SiC microheaters, from 10 to 1000 microns in size, which are long-term operable in air with the heater unit temperature above 1000°C. The use of a membrane in the microheater design has made it possible to essentially reduce the power consumption and improve persistence properties
Keywords
heating elements; high-temperature electronics; membranes; micromechanical devices; semiconductor materials; silicon compounds; 1000 C; SiC; dielectric substrate; meander; membrane; persistence; power consumption; silicon carbide microheater; Biomembranes; Conducting materials; Energy consumption; Resistance heating; Silicon carbide; Temperature sensors; Thermal conductivity; Thermal expansion; Thermal resistance; Thermal stability;
fLanguage
English
Publisher
ieee
Conference_Titel
High Temperature Electronics Conference, 1998. HITEC. 1998 Fourth International
Conference_Location
Albuquerque, NM
Print_ISBN
0-7803-4540-1
Type
conf
DOI
10.1109/HITEC.1998.676814
Filename
676814
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