DocumentCode :
1587455
Title :
Switching properties of series connected static induction thyristor stack
Author :
Tsunoda, K. ; Maeyama, M. ; Hotta, E. ; Shimizu, N.
Author_Institution :
Dept. of Electr. & Electron. Syst., Saitama Univ., Japan
Volume :
2
fYear :
2001
Firstpage :
1786
Abstract :
In recent years, various semiconductor switches with ability of high voltage and current are researched and developed for electric power devices. Those merits are a long life time, high reliabilities and miniaturization of components. Our goal in this study is to examine switching properties of series connected Static Induction Thyristor (SI-Thy) stack for the purpose of applying to a pulsed power generator with pulse forming line (PFL). As a result, in the case of 3 SI-Thy´s connected in series, almost the same turn-on time (about 100 nanoseconds) was obtained at higher switch voltage (more than 10 kV). Our empirical result shows that the SI-Thy stack enables us to apply it to switch a pulsed power generator. Furthermore, we compared the characteristics of the stack with a simple.
Keywords :
power semiconductor switches; pulsed power switches; switching; thyristor circuits; 10 kV; 100 ns; pulse forming line; pulsed power generator; semiconductor switches; series connected static induction thyristor stack; switching properties; turn-on time; Driver circuits; Impedance; Induction generators; Insulated gate bipolar transistors; Power generation; Power semiconductor switches; Pulse generation; Thyratrons; Thyristors; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Pulsed Power Plasma Science, 2001. PPPS-2001. Digest of Technical Papers
Conference_Location :
Las Vegas, NV, USA
Print_ISBN :
0-7803-7120-8
Type :
conf
DOI :
10.1109/PPPS.2001.1001919
Filename :
1001919
Link To Document :
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