Title :
A SiGe PA with dual dynamic bias control and memoryless digital predistortion for WCDMA handset applications
Author :
Deng, Junxiong ; Gudem, Prasad ; Larson, Lawrence E. ; Kimball, Don ; Asbeck, Peter M.
Author_Institution :
Dept of Electr. & Comput. Eng., Univ. of California San Diego, La Jolla, CA, USA
Abstract :
The paper demonstrates a two-stage 1.95 GHz WCDMA handset RFIC power amplifier (PA) implemented in 1.8 mm2 in a 250 nm SiGe BiCMOS process. With an integrated dual dynamic bias control of the collector current and the collector voltage in the output stage, the average power efficiency of the two-stage PA is improved by over a factor of two. An off-chip memoryless digital predistortion is also adopted to improve the linearity of the power amplifier, satisfying the 3GPP WCDMA adjacent channel power ratio (ACPR) specifications with 26 dBm average channel output power and a peak power-added efficiency of 27%.
Keywords :
BiCMOS analogue integrated circuits; Ge-Si alloys; UHF integrated circuits; UHF power amplifiers; code division multiple access; integrated circuit design; linearisation techniques; memoryless systems; mobile handsets; nonlinear distortion; 1.95 GHz; 250 nm; BiCMOS process; RFIC power amplifier; SiGe; WCDMA handset; adjacent channel power ratio; collector current; collector voltage; design specifications; dual dynamic bias control; linearization techniques; memoryless digital predistortion; off-chip memoryless digital predistortion; power efficiency; power-added efficiency; silicon germanium PA; two-stage PA; BiCMOS integrated circuits; Digital control; Germanium silicon alloys; Multiaccess communication; Power amplifiers; Predistortion; Radiofrequency integrated circuits; Silicon germanium; Telephone sets; Voltage control;
Conference_Titel :
Radio Frequency integrated Circuits (RFIC) Symposium, 2005. Digest of Papers. 2005 IEEE
Print_ISBN :
0-7803-8983-2
DOI :
10.1109/RFIC.2005.1489774
