Characteristics of Cr-Al-N films prepared by pulsed laser deposition

Author

Suzuki, T. ; Hirai, M. ; Suematsu, H. ; Jiang, W. ; Yatsui, K.

Author_Institution

Extreme Energy-Density Res. Inst., Nagaoka Univ. of Technol., Niigata, Japan

Volume

2

fYear

2001

Firstpage

1838

Abstract

The (Cr/sub 1-x/Al/sub x/)N thin films have been successfully prepared by pulsed laser deposition ( PLD). The structure of the (Cr/sub 1-x/Al/sub x/)N thin films for x < 0.70 was found to be B1 ( NaCl) structure. The lattice parameter of the B1 (Cr/sub 1-x/Al/sub x/)N thin films decreases with increasing x value, which is probably due to Al substitution for Cr in the CrN lattice. Phase transition from B1 structure to B4 (wurtzite) structure occurs above x = 0.70, being in reasonable agreement with the theoretical prediction. The hardness of the (Cr/sub 1-x/Al/sub x/)N thin films shows the maximum value of HV /spl sim/ 430 at x = 0.25.

Keywords

chromium compounds; crystal structure; hardness; pulsed laser deposition; solid-state phase transformations; surface phase transformations; thin films; (Cr/sub 1-x/Al/sub x/)N thin films; 134 structure; Al substitution; B1 structure thin films; Cr-Al-N; Cr-Al-N films; NaCl structure; hardness; lattice parameter; pulsed laser deposition; thin films; wurtzite; Aluminum; Chromium; Coatings; Lattices; Optical pulses; Oxidation; Pulsed laser deposition; Sputtering; Substrates; Transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Pulsed Power Plasma Science, 2001. PPPS-2001. Digest of Technical Papers

Conference_Location

Las Vegas, NV, USA

Print_ISBN

0-7803-7120-8

Type

conf

DOI

10.1109/PPPS.2001.1001932

Filename

1001932