Preparation of polycrystalline silicon thin films by pulsed ion-beam evaporation

By intense pulsed ion beam evaporation, we have succeeded in the preparation of polycrystalline silicon thin films on silicon substrate. High crystallinity and deposition rate have been achieved without heating the substrate. The crystallinity of poly-Si film has been improved with increasing the density of the ablation plasma, where the grain size of the film has been found to be much smaller. To enhance the crystallinity and density of poly-Si thin film, bias voltage was applied to the substrate, where the quality of poly-Si film has been improved by the ion bombardment.