Title :
High quality InAs quantum dot lasers on germanium substrates
Author :
Shumin Wang ; Qian Gong ; Peng Wang ; Chunfang Cao ; Yaoyao Li
Author_Institution :
Shanghai Inst. of Microsyst. & Inf. Technol., Shanghai, China
Abstract :
InAs/GaAs quantum dot (QD) laser structures were fabricated using gas source molecular beam epitaxy (GSMBE) on Ge (100) substrate. Low temperature grown GaAs buffer layer prevented formation of anti-phase domain (APD). Growth temperature and deposition thickness of InAs were optimized, respectively. Active region consists of five stacked InAs QD layers separated by 40 nm GaAs space layer. Ridge waveguide laser diodes with a strip with of 8 μm were fabricated. Room temperature continuous wave (RT CW) emission was achieved with lasing wavelength centred at 1.05 μm and maximum laser output power reached up to 110 mW from single facet without any facet coating. Performance of similar laser diodes on Ge and GaAs substrates was compared and the laser characteristic temperature for both devices was found similar.
Keywords :
III-V semiconductors; antiphase boundaries; buffer layers; chemical beam epitaxial growth; gallium arsenide; indium compounds; quantum dot lasers; ridge waveguides; waveguide lasers; APD; GSMBE; Ge; InAs-GaAs; QD laser structure; RT CW emission; antiphase domain; gas source molecular beam epitaxy; germanium substrate; high quality quantum dot laser; ridge waveguide laser diode; room temperature continuous wave; size 40 nm; size 8 mum; temperature 293 K to 298 K; wavelength 1.05 mum; Diode lasers; Gallium arsenide; Molecular beam epitaxial growth; Power generation; Substrates; Temperature; InAs quantum dot; germanium substrate; laser; molecular beam epitaxy;
Conference_Titel :
Transparent Optical Networks (ICTON), 2015 17th International Conference on
Conference_Location :
Budapest
DOI :
10.1109/ICTON.2015.7193404
