Title :
Investigation of 1.2 kV investigation of SiC MOSFETs for aeronautics applications
Author :
Othman ; Lefebvre, Serge ; Berkani, M. ; Khatir, Z. ; Ibrahim, Amin ; Bouzourene, A.
Author_Institution :
THALES Avionics Electr. Syst., Chatou, France
Abstract :
This paper evaluates robustness and performances of two types of 1.2 kV SiC MOSFETs in order to investigate these power devices for medium power aeronautics applications. The first part focuses on switching performances with effects of gate resistance and load current level. The second part focuses on robustness results showing the weakness of the gate under short-circuit test.
Keywords :
MOSFET; silicon compounds; wide band gap semiconductors; SiC; SiC MOSFET; gate resistance; load current level; medium power aeronautics applications; power devices; short-circuit test; switching performances; voltage 1.2 kV; Logic gates; MOSFET; MOSFET circuits; Performance evaluation; Robustness; Silicon carbide; Switches; Ageing; Device characterisation; MOSFET; Robustness; Silicon Carbide (SiC);
Conference_Titel :
Power Electronics and Applications (EPE), 2013 15th European Conference on
Conference_Location :
Lille
DOI :
10.1109/EPE.2013.6634665
