DocumentCode
1587937
Title
Investigation of 1.2 kV investigation of SiC MOSFETs for aeronautics applications
Author
Othman ; Lefebvre, Serge ; Berkani, M. ; Khatir, Z. ; Ibrahim, Amin ; Bouzourene, A.
Author_Institution
THALES Avionics Electr. Syst., Chatou, France
fYear
2013
Firstpage
1
Lastpage
9
Abstract
This paper evaluates robustness and performances of two types of 1.2 kV SiC MOSFETs in order to investigate these power devices for medium power aeronautics applications. The first part focuses on switching performances with effects of gate resistance and load current level. The second part focuses on robustness results showing the weakness of the gate under short-circuit test.
Keywords
MOSFET; silicon compounds; wide band gap semiconductors; SiC; SiC MOSFET; gate resistance; load current level; medium power aeronautics applications; power devices; short-circuit test; switching performances; voltage 1.2 kV; Logic gates; MOSFET; MOSFET circuits; Performance evaluation; Robustness; Silicon carbide; Switches; Ageing; Device characterisation; MOSFET; Robustness; Silicon Carbide (SiC);
fLanguage
English
Publisher
ieee
Conference_Titel
Power Electronics and Applications (EPE), 2013 15th European Conference on
Conference_Location
Lille
Type
conf
DOI
10.1109/EPE.2013.6634665
Filename
6634665
Link To Document