Title :
Low power consumption 10-Gb/s SiGe modulator drivers with 9VPP differential output swing using intrinsic collector-base capacitance feedback network
Author :
Li, Day-Uei ; Huang, Li-Ren ; Tsai, Chia-Ming
Author_Institution :
SoC Technol. Center, Ind. Technol. Res. Inst., Hsinchu, Taiwan
Abstract :
A novel intrinsic collector-base capacitance (CCB) feedback network (ICBCFN) is incorporated into the conventional cascode circuit configuration to implement a 10-Gb/s modulator driver in 0.35 μm SiGe BiCMOS technology. The driver integrated circuit (IC) could output 9 VPP differential or 4.5 VPP single-ended (S.E.) output swing with rise/fall time less than 29 ps while it consumes power as low as 0.8 W. The performance and simulation results compared with preceding works are also shown in this paper. The proposed driver consumes the lowest power and occupies the smallest die area, and its output swing spans wider than the commonly-reported silicon-based modulator drivers.
Keywords :
BiCMOS integrated circuits; circuit feedback; driver circuits; electro-optical modulation; low-power electronics; optical communication equipment; 0.35 micron; 0.8 W; 10 Gbit/s; 29 ps; 4.5 V; 9 V; BiCMOS; ICBCFN; SiGe; cascode circuit configuration; differential output swing; intrinsic collector-base capacitance feedback network; low power consumption drivers; modulator drivers; single-ended output swing; BiCMOS integrated circuits; Capacitance; Driver circuits; Energy consumption; Germanium silicon alloys; Heterojunction bipolar transistors; Integrated circuit technology; Intensity modulation; Output feedback; Silicon germanium;
Conference_Titel :
Radio Frequency integrated Circuits (RFIC) Symposium, 2005. Digest of Papers. 2005 IEEE
Print_ISBN :
0-7803-8983-2
DOI :
10.1109/RFIC.2005.1489796
