High voltage swing and high data rate multiplexers in SiGe technology

Author

Wurzer, Martin ; Knapp, Herbert ; Meister, Thomas F.

Author_Institution

Corporate Res., Infineon Technol. AG, Munich, Germany

fYear

2005

Firstpage

321

Lastpage

324

Abstract

A 2:1 time-division multiplexer with high differential output voltage swing of 2×2 V_pp operating at a data rate of 40 Gb/s is reported. The circuit shows rise and fall times of about 11 ps and consumes 1.65 W. It is fabricated in 0.35 μm/200 GHz-f_T production-near SiGe bipolar technology with a V_CE0 of 1.8 V. Furthermore a high-speed 2:1 multiplexer capable of processing data rates higher than 80 Gb/s has been realized in the same technology. It consumes 0.75 W.

Keywords

Ge-Si alloys; bipolar integrated circuits; integrated circuit design; integrated circuit measurement; multiplexing equipment; optical communication equipment; optical fibre communication; semiconductor materials; time division multiplexing; 0.35 micron; 0.75 W; 1.65 W; 1.8 V; 11 ps; 200 GHz; 40 Gbit/s; 80 Gbit/s; SiGe; SiGe bipolar technology; SiGe technology; circuit rise and fall times; diffierential output voltage swing; fibre optic communication systems; high voltage swing high data rate multiplexers; high-speed multiplexer; operating data rate; processing data rates; time-division multiplexer; Automotive engineering; Cutoff frequency; Driver circuits; Electric breakdown; Germanium silicon alloys; Integrated circuit technology; Multiplexing; Silicon germanium; Voltage; Wiring;

fLanguage

English

Publisher

ieee

Conference_Titel

Radio Frequency integrated Circuits (RFIC) Symposium, 2005. Digest of Papers. 2005 IEEE

ISSN

1529-2517

Print_ISBN

0-7803-8983-2

Type

conf

DOI

10.1109/RFIC.2005.1489797

Filename

1489797