Title :
Experimental study of parasitic inductance influence on SiC MOSFET switching performance in Matrix converter
Author :
Safari, Saeed ; Castellazzi, Alberto ; Wheeler, Pat
Author_Institution :
PEMC Group, Univ. of Nottingham, Nottingham, UK
Abstract :
This paper presents an experimental parametric study of parasitic inductance influence on SiC MOSFET switching waveforms in matrix converter. The two most critical parasitic inductances have been studied and compared in terms of their effect on waveform ringing, switching loss and device stress. Knowledge about the effects of parasitic inductances on the switching behavior serves as an important basis for the design guideline of fast switching matrix converter.
Keywords :
field effect transistor switches; inductance; matrix convertors; power semiconductor switches; switching convertors; design guideline; device stress; parasitic inductance influence; silicon carbide MOSFET switching waveforms; switching behavior; switching loss; switching matrix converter; waveform ringing; Inductance; Layout; MOSFET; Matrix converters; Silicon carbide; Switches; Switching circuits; MOSFET; Silicon carbide; matrix converter; parasitic; switching characteristics;
Conference_Titel :
Power Electronics and Applications (EPE), 2013 15th European Conference on
Conference_Location :
Lille
DOI :
10.1109/EPE.2013.6634685
